vol.249 October 2021
World's first*1 leakage current of max.
1 pA in a single package
MOS FET relay module G3VM-□MT with T-shaped circuit structure dramatically reduces leakage current and can be used in applications (high-precision measurement devices) where replacing reed relays had been difficult.
＊1. According to OMRON's research in September 2021.
A leakage current of less than 1 pA is achieved by combining technology (T-shaped circuit) and ideas (one-packaging)
G3VM-□MT Minimization of leakage current + Longer service life + Space and man-hour saving
Minimizing leakage current
It contributes to higher measurement accuracy of equipment by minimizing leakage current (1 pA or less), which has been difficult to achieve with conventional MOS FET relays.
Long life thanks to semiconductor relay
Long-life semiconductor relay (non-contact output) with no contact wear contributes to a significant reduction in maintenance man-hours and component costs.
Less footprint and man-hour by one packaging
By integrating the wiring of the output circuit in one package, it contributes to downsizing of the device with less footprint and man-hour reduction with 1/3 of mounting man-hours, compared to configuring a T-shaped circuit on the PCB surface.
＊2. Assumed is 50 million cycles as a reference value for the number of mechanical durability for general signal relays.
＊3. Assumed is 100 billion cycles as a reference value for the number of durability for general reed relays. On the other hand, the G3VM-□MT (T-module) is a semiconductor relay and does not have a service life based on the number of switching cycles. Mechanical durability is listed as life expectancy.
* Contents as of September 2021.
In the interest of product improvement, specifications are subject to change without notice
