EE-SJ3 Series Photomicrosensor (Transmissive)

High-resolution model with a 0.2-mm-wide sensing aperture, high-sensitivity model with a 1-mm-wide sensing aperture, and model with a horizontal sensing aperture are available.

RoHS Compliant

Note: This web page provides an excerpt from a datasheet. Refer to Product Datasheet and other applicable documents for more information.

Absolute Maximum Ratings (Ta = 25ºC)

Note:	1.	Refer to the temperature rating chart if the ambient temperature exceeds 25ºC.
	2.	The pulse width is 10 μs maximum with a frequency of 100 Hz.
	3.	Complete soldering within 10 seconds.

Electrical and Optical Characteristics (Ta = 25ºC)

Item		Symbol	Value			Condition
Item		Symbol	EE-SJ3-C	EE-SJ3-D	EE-SJ3-G	Condition
Emitter	Forward voltage	VF	1.2 V typ., 1.5 V max.			IF = 30 mA
	Reverse current	IR	0.01 μA typ., 10 μA max.			VR = 4 V
	Peak emission wavelength	λP	940 nm typ.			IF = 20 mA
Detector	Light current	IL	1 to 28 mA typ.	0.1 mA min.	0.5 to 14 mA	IF = 20 mA, VCE = 10 V
	Dark current	ID	2 nA typ., 200 nA max.			VCE = 10 V,0 x
	Leakage current	ILEAK	---			---
	Collector-Emitter saturated voltage	VCE (sat)	0.1 V typ., 0.4 V max.	---	0.1 V typ., 0.4 V max.	IF = 20 mA, IL = 0.1 mA
	Peak spectral sensitivity wavelength	λP	850 nm typ.			VCE = 10 V
Rising time		tr	4 μs typ.			VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time		tf	4 μs typ.			VCC = 5 V, RL = 100 Ω, IL = 5 mA

Note: All units are in millimeters unless otherwise indicated.

Unless otherwise specified, the tolerances are as shown below.