Product Details Portlet
Unless otherwise specified, the tolerances are as shown below.
EE-SJ3 Series Photomicrosensor (Transmissive)
- High-resolution model with a 0.2-mm-wide sensing aperture, high-sensitivity model with a 1-mm-wide sensing aperture, and model with a horizontal sensing aperture are available.
RoHS Compliant
- English
Datasheet
- English
Micro Sensing Device Data Book
- English
Sensors Selector Guide
- English
Photomicrosensors Selection Guide
- Japanese
データシート
- Chinese
目录

Note: This web page provides an excerpt from a datasheet. Refer to Product Datasheet and other applicable documents for more information.
Absolute Maximum Ratings (Ta = 25ºC)
Electrical and Optical Characteristics (Ta = 25ºC)
Item |
Symbol
|
Rated value
|
|
---|---|---|---|
Emitter | Forward current | IF | 50 mA (see note 1) |
Pulse forward current | IFP | 1 A (see note 2) |
|
Reverse voltage | VR | 4 V | |
Detector | Collector-Emitter voltage | VCEO | 30 V |
Emitter-Collector voltage | VECO | --- | |
Collector current | IC | 20 mA | |
Collector dissipation | PC | 100 mW (see note 1) |
|
Ambient temperature | Operating | Topr | -25ºC to 85ºC |
Storage | Tstg | -30ºC to 100ºC | |
Soldering temperature | Tsol | 260ºC (see note 3) |
Note: | 1. | Refer to the temperature rating chart if the ambient temperature exceeds 25ºC. |
2. | The pulse width is 10 μs maximum with a frequency of 100 Hz. | |
3. | Complete soldering within 10 seconds. |
Electrical and Optical Characteristics (Ta = 25ºC)
Item |
Symbol
|
Value
|
Condition
|
|||
---|---|---|---|---|---|---|
EE-SJ3-C
|
EE-SJ3-D
|
EE-SJ3-G
|
||||
Emitter | Forward voltage | VF | 1.2 V typ., 1.5 V max. | IF = 30 mA | ||
Reverse current | IR | 0.01 μA typ., 10 μA max. | VR = 4 V | |||
Peak emission wavelength | λP | 940 nm typ. | IF = 20 mA | |||
Detector | Light current | IL | 1 to 28 mA typ. | 0.1 mA min. | 0.5 to 14 mA | IF = 20 mA, VCE = 10 V |
Dark current | ID | 2 nA typ., 200 nA max. | VCE = 10 V,0 |
|||
Leakage current | ILEAK | --- | --- | |||
Collector-Emitter saturated voltage | VCE (sat) | 0.1 V typ., 0.4 V max. |
--- | 0.1 V typ., 0.4 V max. |
IF = 20 mA, IL = 0.1 mA | |
Peak spectral sensitivity wavelength | λP | 850 nm typ. | VCE = 10 V | |||
Rising time | tr | 4 μs typ. | VCC = 5 V, RL = 100 Ω, IL = 5 mA |
|||
Falling time | tf | 4 μs typ. |
Note: All units are in millimeters unless otherwise indicated. |
Model
|
Aperture (a × b)
|
---|---|
EE-SJ3-C | 2.1 × 1.0 |
EE-SJ3-D | 2.1 × 0.2 |
EE-SJ3-G | 0.5 × 2.1 |
Terminal No.
|
Name
|
---|---|
A | Anode |
K | Cathode |
C | Collector |
E | Emitter |
Unless otherwise specified, the tolerances are as shown below.
Dimensions
|
Tolerance
|
---|---|
3 mm max. | ±0.3 |
3 < mm ≤ 6 | ±0.375 |
6 < mm ≤ 10 | ±0.45 |
10 < mm ≤ 18 | ±0.55 |
18 < mm ≤ 30 | ±0.65 |